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| ZXT11N20DF SuperSOT4TM 20V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES * * * * * * * * * Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 5A IC=2.5A Continuous Collector Current SOT23 package SOT23 APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control E C B TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ORDERING INFORMATION DEVICE ZXT11N20DFTA ZXT11N20DFTC DEVICE MARKING 2N0 REEL SIZE (inches) 7 13 ISSUE 1 - DECEMBER 1999 1 ZXT11N20DF ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25C (a) Linear Derating Factor Power Dissipation at TA=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 40 20 7.5 5 2.5 500 625 5 806 6.4 -55 to +150 UNIT V V V A A mA mW mW/C mW mW/C C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 200 155 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 1 - DECEMBER 1999 2 ZXT11N20DF TYPICAL CHARACTERISTICS 0.7 Max Power Dissipation (W) 10 IC Collector Current (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 1 DC 1s 100ms 10ms 100m 1ms 100s Single Pulse Tamb=25C 10m 100m 1 10 VCE Collector-Emitter Voltage (V) Temperature (C) Safe Operating Area Derating Curve 225 Thermal Resistance (C/W) 200 175 150 125 100 75 50 25 0 100 1m 10m D=0.1 Single Pulse D=0.2 D=0.05 D=0.5 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 1 - DECEMBER 1999 3 ZXT11N20DF ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 7 65 40 90 0.9 0.85 200 300 250 150 100 160 20 122 295 MIN. 40 20 7.5 100 100 100 12 100 60 130 1.0 1.0 900 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =32V V EB =6V V CES =32V I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =1A, I B =100mA* I C =2.5A, I B =250mA* I C =2.5A, I B =250mA* I C =2.5A, V CE =2V* I C =10mA, V CE =2V* I C =100mA, V CE =2V* I C =1A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* MHz pF ns ns I C =50mA, V CE =10V f=50MHz V CB =10V, f=1MHz V CC =10V, I C =2A I B1 =I B2 =20mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ISSUE 1 - DECEMBER 1999 4 ZXT11N20DF TYPICAL CHARACTERISTICS 0.25 IC/IB=50 Tamb=25C 0.20 100m VCE(SAT) (V) VCE(SAT) (V) 0.15 0.10 0.05 0.00 1m 100C IC/IB=100 25C 10m IC/IB=50 -55C IC/IB=10 10m 100m 1 IC Collector Current (A) 10 1m 1m 10m 100m 1 10 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1.2 VCE=2V 100C 1.0 IC/IB=50 Normalised Gain 1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m 1 10 -55C 25C -55C VBE(SAT) (V) 0.8 25C 0.6 100C 0.4 1m 10m 100m 1 10 IC Collector Current (A) IC Collector Current (A) hFE v IC VBE(SAT) v IC 1.0 VCE=2V VBE(ON) (V) 0.8 -55C 25C 0.6 100C 0.4 1m 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC ISSUE 1 - DECEMBER 1999 5 ZXT11N20DF PACKAGE DIMENSIONS PAD LAYOUT DETAILS DIM Millimetres Min A B C D F G K L N 2.67 1.20 - 0.37 0.085 NOM 1.9 0.01 2.10 NOM 0.95 N Inches Max 3.05 1.40 1.10 0.53 0.15 Min 0.105 0.047 - 0.0145 0.0033 NOM 0.075 0.10 2.50 0.0004 0.0825 NOM 0.037 Max 0.120 0.055 0.043 0.021 0.0059 0.004 0.0985 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - DECEMBER 1999 6 |
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